机译:InP / inGaAsP中的电压驱动1××2多模干涉光开关
Eindhoven Univ Tech Inst Photon Integrat Eindhoven Netherlands;
indium compounds; gallium arsenide; refractive index; integrated optics; III-V semiconductors; optical design techniques; optical switches; light interference; optical waveguide theory; modal analysis; light absorption; voltage-driven 1 x 2 multimode interference optical switch; optical field; output cross-section; multimode waveguide; symmetric output waveguides; reverse bias voltage; output port; optical switching mechanism; wide perturbed waveguide; optical switch design; input waveguide width; output waveguide widths; voltage-perturbed refractive index; absorption; electrical solvers; optical solvers; optical wavelength; switching voltage; voltage-driven InP-InGaAsP 1 x 2 optical switch; modal analysis; electrode length; calibrated model; extinction ratio; size 20; 0 mum; size 8; 0 mum; size 1; 3 mm; wavelength 1550; 0 nm; voltage-12; 0 V; InP-InGaAsP;
机译:1×4 InGaAsP / InP多模干涉波导开关的动态开关特性
机译:1×4 InGaAsP / InP多模干涉波导开关的动态开关特性
机译:1×4 InGaASP / InP多模干涉波导开关的动态开关特性
机译:1×4 INP / INGAASP光学集成多模干涉波导开关的实验演示
机译:基于N沟道InGaAsP-InP的倒置通道技术器件(ICT)的设计,制造和表征,用于光电集成电路(OEIC):双异质结光电开关(DOES),异质结场效应晶体管(HFET),双极倒置沟道场-效应晶体管(BICFET)和双极型反向沟道光电晶体管(BICPT)。
机译:光学传感使用光纤多模干涉装置:非共同传感方案的回顾
机译:用于环形布拉格反射,光学切换和传感的InGaasp-Inp半导体微腔几何形状