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Voltage-driven 1 × 2 multimode interference optical switch in InP/inGaAsP

机译:InP / inGaAsP中的电压驱动1××2多模干涉光开关

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摘要

A voltage-driven InP/InGaAsP 1 x 2 optical switch based on multimode interference (MMI) is proposed and numerically studied. In plane shift of the optical field across the output cross-section of a multimode waveguide enables optical switching between two symmetric output waveguides. Two twin electrodes on top of the multimode waveguide are tuned with reverse bias voltage to switch output port by reconfiguration of the refractive index profile. The optical switching mechanism and the design method are explained through a modal analysis of the wide perturbed waveguide. An optical switch design with an input waveguide width of 20 mu m, output waveguide widths of 8 mu m, and electrode length of 1.3 mm is proposed. The numerical prediction of the device performance is provided by combining a calibrated model of the voltage-perturbed refractive index and absorption with electrical and optical solvers. Simulation results show that an extinction ratio of 29 dB can be achieved at an optical wavelength of 1550 nm and with a switching voltage of -12 V.
机译:提出了一种基于多模干扰(MMI)的电压驱动InP / InGaAsP 1 x 2光开关,并进行了数值研究。跨多模波导的输出横截面的光场的平面内移位使得能够在两个对称的输出波导之间进行光切换。多模波导顶部的两个双电极通过反向偏置电压进行调谐,以通过重新配置折射率分布来切换输出端口。通过对宽扰动波导的模态分析,解释了光开关机制和设计方法。提出了一种光开关设计,其输入波导宽度为20μm,输出波导宽度为8μm,电极长度为1.3mm。通过将电压扰动的折射率和吸收的校准模型与电和光解算器相结合,可以提供器件性能的数值预测。仿真结果表明,在1550 nm的光学波长和-12 V的开关电压下,可以实现29 dB的消光比。

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