Intel unveils silicon laser at 1850 nm

摘要

Intel, researchers have unveiled a cascaded silicon Raman laser that emits at 1850 nm, a wavelength that is ideal for gas-sensing applications. "Our laser is efficient, works at room temperature and could take silicon photonics technology to lots of everyday devices," said Mario Paniccia, director of Intel's sili-con photonics lab. Cascaded lasing is a unique attribute of Raman lasers, which use an optical pump to produce coherent light emission at wavelengths that are hard to reach with conventional lasers. Raman lasers can also be made from materials - such as silicon -that do not have the right energy-band structure to produce laser light by stimulated emission.