INDUCING HYDROGEN INTO RF PLASMA AND LASER PROCESSING OF STRUCTURAL FAULTS IN SILICON IN ORDER TO TRANSFER MONO CRYSTALLINE LAYERS WITH THICKNESSES UNDER 50 NM

摘要

The invention relates to a method for inducing and processing structural faults extended in a semi-conductor to facilitate the extraction of a mono crystalline layer in order to transfer a micro electronic multilayer device onto a sublayer. According to the invention, the method comprises the controlled induction of the structural faults under the surface of a Si plate by introducing the Si plate at the half way distance between two plane-parallel electrodes located in a tube for discharging of a gas, preferably hydrogen, at a work pressure of 5-8 Pa and a flow rate of 10...20 sccm capacitively coupled to an oscillator in the radio-frequency range, the duration of the treating being of 1 h at a power of discharge of 100 W and their processing by means of a laser beam having a wave length of less than 335 nm in the ultraviolet range in order to facilitate the further mechanical separation of a superficial monocrystallin layer of Si having a thickness under 50 mm.