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机译:150 KeV质子辐照对GaInAsN本体和量子阱结构的光致发光
Univ Chinese Acad Sci 19-A Yuquan Rd Beijing 100049 Peoples R China|Chinese Acad Sci Xinjiang Tech Inst Phys & Chem Key Lab Funct Mat & Device Special Environm 40-1 South Beijing Rd Urumqi 830011 Peoples R China;
Chinese Acad Sci Xinjiang Tech Inst Phys & Chem Key Lab Funct Mat & Device Special Environm 40-1 South Beijing Rd Urumqi 830011 Peoples R China|Yunnan Normal Univ Sch Energy & Environm 768 Juxian Rd Kunming 650500 Yunnan Peoples R China;
Chinese Acad Sci Xinjiang Tech Inst Phys & Chem Key Lab Funct Mat & Device Special Environm 40-1 South Beijing Rd Urumqi 830011 Peoples R China;
Chinese Acad Sci Xinjiang Tech Inst Phys & Chem Key Lab Funct Mat & Device Special Environm 40-1 South Beijing Rd Urumqi 830011 Peoples R China|Sci & Technol Reliabil Phys & Applicat Technol El 110 Dongguanzhuang Rd Guangzhou 510610 Guangdong Peoples R China;
Yunnan Normal Univ Sch Energy & Environm 768 Juxian Rd Kunming 650500 Yunnan Peoples R China;
Dilute nitride; InGaAsN; Proton irradiation; Degradation; PL spectra;
机译:150后对GaAs / GE太阳能电池的退火效应?KEV质子辐照
机译:380 keV质子辐照对Eu掺杂GaN的光致发光
机译:质子辐照对聚二甲基硅氧烷嵌入的胶体摄入/ ZnS核 - 壳量子点的影响:通过时间分辨的光致发光分析来区分核心诱导的缺陷
机译:两种波长激发光致发光质子辐照InAs / GaAs量子点结构中非辐射复合中心的比较研究
机译:氢和九种碳氢化合物气中50至150 KEV质子的能量损失,能量损失的分布和能量损失的增加率
机译:通过放牧入射率小角X射线散射(吉安斯)技术用170keV质子照射聚醚醚酮膜的微观结构研究
机译:150 kev质子辐射后GaAs / GE太阳能电池的退火效应
机译:纳米结构中的辐射效应:质子辐照诱导量子点和量子阱变化的比较