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Structure and photoluminescence properties of ZnWO_4 film prepared by depositing WO_3/ZnO/WO_3 heterolayer via magnetron sputtering technique

机译:磁控溅射技术沉积WO_3 / ZnO / WO_3异质层制备的ZnWO_4薄膜的结构和光致发光性能

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Novel ZnWO4 thin films were achieved by annealing sandwich WO3/ZnO/WO3 (WZW) heterolayer that were deposited on clean fused silica substrates by RF magnetron sputtering technique. The crystal structures, surface morphologies and photoluminescence (PL) properties of the annealed WZW heterolayers were characterized by x-ray diffraction (XRD), Raman, scanning electron microscopy (SEM) and PL measurements. The XRD and Raman patterns show that the ZnWO4 thin films formed from WZW heterolayers possess the monoclinic wolframite structure with a preferential orientation along the a-axis. The annealing temperature of WZW heterolayer plays a vital role in determining the crystallization, surface morphologies and PL properties of the formed ZnWO4 films. The SEM graphs and PL spectra indicate that the annealing treatment at about 750 degrees C for 30min is very effective for deposited WZW heterolayer to form the flat ZnWO4 thin film with the regular nanometer grains (200-400 nm) and the strongest PL emission near about 495 nm, while further increasing annealing temperature to 850 degrees C leads to a rough surface and weakened PL intensity. The PL spectra from all the annealed WZW films display a broad and asymmetrical shape and are depend on the excitation wavelengths in the range of 240-290 nm as well as annealing temperature. The related PL mechanisms were analyzed and discussed according to the excitation spectra monitored at 410 nm and 495 nm, respectively. It is suggested that the coexistence of the ZnWO4 and ZnO excitation bands in the film should be responsible for the evolving of PL shapes with the excitation wavelengths. Finally, the average PL decay time of the formed ZnWO4 film was determined to be about 22 mu s by time-resolving the three intrinsic emissions of the ZnWO4 crystallites. This work illustrates that magnetron sputtering is an effective technique to prepare the fluorescing ZnWO4 film.
机译:通过对夹层WO3 / ZnO / WO3(WZW)异质层进行退火,获得了新颖的ZnWO4薄膜,该异质层通过RF磁控溅射技术沉积在干净的熔融石英基板上。通过X射线衍射(XRD),拉曼光谱,扫描电子显微镜(SEM)和PL测量来表征退火的WZW异质层的晶体结构,表面形态和光致发光(PL)特性。 XRD和拉曼光谱表明,由WZW异质层形成的ZnWO4薄膜具有沿a轴优先取向的单斜晶钨铁矿结构。 WZW异质层的退火温度在决定所形成的ZnWO4薄膜的结晶,表面形貌和PL特性方面起着至关重要的作用。 SEM图和PL光谱表明,在约750℃下进行30分钟的退火处理对于沉积的WZW异质层形成具有规则纳米晶粒(200-400nm)且在约200nm附近的PL发射最强的平坦ZnWO4薄膜非常有效。 495 nm,同时将退火温度进一步提高到850℃会导致表面粗糙并削弱PL强度。来自所有退火的WZW膜的PL光谱显示出宽且不对称的形状,并且取决于240-290 nm范围内的激发波长以及退火温度。根据分别在410 nm和495 nm处监测到的激发光谱对相关的PL机理进行了分析和讨论。建议薄膜中ZnWO4和ZnO激发带的共存应负责激发波长下PL形状的演变。最后,通过时间分辨ZnWO4晶体的三个本征发射,可以确定所形成的ZnWO4薄膜的平均PL衰减时间约为22 s。这项工作表明,磁控溅射是制备发荧光的ZnWO4膜的有效技术。

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