Optimizationof second-order nonlinearity in UV-poled silica glass

摘要

Second-order optical nonlinearity was induced by ultraviolet (UV)-poling in Ge-doped SiO_2 thin films prepared by radio-frequency sputtering. Effects of sputtering, poling conditions and other treatment on the intensity and decay of second harmonic generation (SHG) were investigated. The d coefficient which is a measure of SHG intensity was fo0und to depend on oxygen flow content during sputtering and on Ge-content with an optimum at around 1 cm~3/ min and 50 mol/100, respectively.