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机译:ln_(0.1)Ga_(0.9)As / GaAs多层焦平面阵列覆盖的InAs量子点的光电特性和成像性能研究
National Defense University Department of Electrical and Electronic Engineering No. 190 Sanyuon 1~(st) Street Tahsi, Taoyuan, 335 Taiwan;
National Defense University Department of Electrical and Electronic Engineering No. 190 Sanyuon 1~(st) Street Tahsi, Taoyuan, 335 Taiwan;
molecular beam epitaxy; metalorganic chemical vapor deposition; quantum dot infrared photodetector; high-resolution cross-sectional transmission electron microscope;
机译:具有通过金属有机化学气相沉积法生长的ln_(0.1)Ga_(0.9)As / ln_(0.22)Ga_(0.78)As / ln_(0.1)Ga_(0.9)As沟道的AlGaAs / GaAs高电子迁移率晶体管
机译:具有Al_(0.9)Ga_(0.2)As_(0.1)Sb_(0.9)势垒层的中红外InAs_(0.79)Sb_(0.21)基nBn光电探测器,以及与InAs_(0.87)Sb_(0.13)引脚二极管的比较使用界面失配阵列在GaAs上生长
机译:基于InAs / InGaAs / InAIAs / InP量子点红外光电探测器的高工作温度320 X 256中波长红外焦平面阵列成像
机译:基于InAs / GaAs量子点的320x256注入氢离子焦平面阵列的NEDT特性的改进
机译:InAs / GaAs量子点太阳能电池和InAs纳米线在光伏器件中的应用的光学和机械研究。
机译:退火对1.3μmInAs-InGaAs-GaAs量子点电吸收调制器性能的影响
机译:INAS量子点对IN0.1GA0.9AS表面活性剂层和10O离角(100)GaAs衬底的研究