Analysis of simulation of multiterminal electro-optic modulator based on p-n junction in reverse bias

摘要

A study of a silicon metal oxide semiconductor (MOS)-type light-emitting device (LED) in which the p-n junction works under a reverse bias and the gate voltage is applied to modulate the electric field distribution from the p~+ region through the n region. The use of gate voltage could result in the generation of a field-induced junction which leads to a decrease of the operating voltage of the LED compared to the two terminal p-n junction LED. The dynamics of the photonic emission in the structure and its related response time, and then a more detailed theoretical and simulation understanding of the photonic emission is achieved, which definitively demonstrates the capability of the device in which a reverse-bias region showing light modulation with multi-GHz bandwidth and gigabit-per-second data rate at near-infrared wavelength. Although the emitted optical power is weak, it is advantageous to utilize the device in all-silicon optoelectronic integrated circuits, especially for short-distance on-chip optical interconnects achieved by standard complementary MOS technology.