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机译:变质缓冲层上发射λ-3.0-3.5μm的量子级联激光器的设计注意事项
University of Wisconsin-Madison, Department of Electrical and Computer Engineering, Madison, Wisconsin, United States;
University of Wisconsin-Madison, Department of Electrical and Computer Engineering, Madison, Wisconsin, United States;
lntraband LLC, Madison, Wisconsin, United States;
Massachusetts Institute of Technology, Research Laboratory of Electronics, Cambridge, Massachusetts, United States;
University of Wisconsin-Madison, Department of Electrical and Computer Engineering, Madison, Wisconsin, United States;
University of Wisconsin-Madison, Department of Electrical and Computer Engineering, Madison, Wisconsin, United States;
quantum cascade laser; metamorphic buffer layer; semiconductor laser; metalorganic chemical vapor deposition;
机译:λ≈4.8μm量子级联激光器的InP / Si变质缓冲层上的Ⅲ-Ⅴ超晶格
机译:生长在变质缓冲层上的低应变量子级联激光有源区,用于在3.0-4.0; C; m波长范围内发射
机译:在变质缓冲层上生长的InGaAs / AlInAs应变补偿超晶格,用于低应变,3.6 um发射量子级联激光有源区
机译:变质缓冲层上的量子级联激光有源区
机译:半红外线发射量子级联激光在变质缓冲层上
机译:通过采用光学光谱分程利用基于INP的量子级联激光器的InGaAs层的非接触式测量
机译:在变质缓冲层上的λ〜3.0至3.5微米发光量子级联激光器的设计考虑因素