Modification of the plasma-prepared As-Se-Te films and creation on their base the planar waveguides by continuous laser writing

摘要

As a result of the previous experiments (Mochalov et al. in Opt Quant Electron 49(8):274:1-274:11, 2017), it was found that the Te-based chalcogenide films prepared by plasma deposition have a transparency window in the range from 1.2 to 20 mu m and cannot be modified in the two-photon absorption mode, and in the linear absorption mode only the thermal effects were observed leading to crystallization of the films or their destruction. In this work, PECVD-prepared As-Se-Te films were modified by continuous laser irradiation of different wavelengths-473, 632.8 and 808 nm. For the modification, samples with compositions As40Se50Te10 and As40Se44Te16 were deposited on a substrate of epi-polished crystalline sapphire. This paper presents the results of studying of the effect of continuous laser radiation on the optical and structural properties of the chalcogenide films samples. Also, planar waveguided structures based on the As-Se-Te films were formed and investigated.