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Structural, optical and electrical behavior of zinc oxide/MWCNT composite thin films

机译:氧化锌/ MWCNT复合薄膜的结构,光学和电气特性

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摘要

ZnO/MWCNT composite thin films were prepared on glass substrates by spray pyrolysis, and their structural and optical behavior were investigated. X-ray diffraction analysis revealed the films hexagonal wurtzite phase with a preferred (002) growth orientation. Photoluminescence spectra of the ZnO film showed two main bands, a UV emission band at 377nm (3.28eV) and a broad blue-yellow band at 439-546nm with a band at 503nm. Optical transmittance of 80-85% in the visible range was observed in all the films. In the I-V curves, conductivity was improved when incorporating the MWCNT into the zinc oxide. ZnO/MWCNT, at a value of 2V and irradiated with visible light presented an increased current from 0.6 to 3.2 nA, and a similar pattern was observed when impinging UV light. Film thickness was measured by profilometry, obtaining thicknesses in the range from 143 to 257nm.
机译:通过喷雾热解在玻璃基板上制备ZnO / MWCNT复合薄膜,并研究了它们的结构和光学行为。 X射线衍射分析揭示了六角形紫立菌相,优选(002)生长取向。 ZnO膜的光致发光光谱显示出两个主带,377nm(3.28EV)的UV发射带,宽蓝色的蓝色带,439-546nm,带有503nm的带。在所有胶片中观察到可见范围中80-85%的光学透射率。在I-V曲线中,当将MWCNT掺入氧化物时,改善了电导率。 ZnO / MWCNT,在2V的值下并用可见光照射,呈现从0.6至3.2Na的增加的电流,当撞击UV光时观察到类似的图案。通过轮廓测量测量膜厚度,从143至257nm的范围内获得厚度。

著录项

  • 来源
    《Optical and quantum electronics 》 |2019年第7期| 220.1-220.11| 共11页
  • 作者单位

    Benemerita Univ Autonoma Puebla Ctr Invest Disposit Semicond Inst Ciencias Ave San Claudio & 14 Sur CU Edif IC-5 Puebla 72570 Pue Mexico;

    Benemerita Univ Autonoma Puebla Ctr Invest Disposit Semicond Inst Ciencias Ave San Claudio & 14 Sur CU Edif IC-5 Puebla 72570 Pue Mexico;

    Benemerita Univ Autonoma Puebla Ctr Invest Disposit Semicond Inst Ciencias Ave San Claudio & 14 Sur CU Edif IC-5 Puebla 72570 Pue Mexico;

    Benemerita Univ Autonoma Puebla Ctr Invest Disposit Semicond Inst Ciencias Ave San Claudio & 14 Sur CU Edif IC-5 Puebla 72570 Pue Mexico;

    Univ Carlos III Madrid Dept Ciencia & Ingn Mat & Ingn Quim Ave Univ 30 Madrid 28911 Spain|IAAB Ave Univ 30 Madrid 28911 Spain;

    Benemerita Univ Autonoma Puebla Ctr Invest Disposit Semicond Inst Ciencias Ave San Claudio & 14 Sur CU Edif IC-5 Puebla 72570 Pue Mexico;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Electrical properties; Composite; Thin films; Zinc oxide; Semiconductor;

    机译:电气性质;复合材料;薄膜;氧化锌;半导体;

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