Relaxation oscillations and damping factors of 1.3 mu m In(Ga)As/GaAs quantum-dot lasers

摘要

In(Ga)As/GaAs quantum-dot (QD) lasers with emission wavelength at 1295 nm at room temperature are fabricated. The laser active region contains a threefold stack of QD layers with surface dot density of 4.56 x 10(10) cm(-2). The laser structure is aluminum-free with InGaP as cladding layers. Threshold current density of a narrow stripe laser of 8 mum wide and 3.5 mm long is 152.5 A/cm(2). The highest relaxation oscillation frequency measured at room temperature is 1.8 GHz, corresponding to a modulation bandwidth of 2.8 GHz due to the small damping factor. From the above measurement, the differential gain and gain compression factor were extracted to be 4.3 x 10(-16) cm(2) and 3.4 x 10(-17) cm(3), respectively. Using these parameters, the maximum modulation bandwidth f(3 dB max) is estimated as 7.9 GHz.