Gain-bandwidth trade-off in a transistor laser: quantum well dislocation effect

摘要

The Authors report an analytical model to investigate optoelectronic characteristics reliance of a Transistor Laser on Quantum Well Location. Using simulated base recombination lifetime, optical frequency response for different quantum-well locations extracted. Slipping the well towards the collector, improves the optical bandwidth where a maximum of ≈54 GHz is observed. No resonance peak, limiting factor in diode lasers, is occurred in this enhancement method. Analyzing current gain (β) as a function of the quantum well location, exhibits a decrease in β when the well moved in the direction of the collector so that a trade-off between optical and electrical properties of transistor laser is evident. The trade-off is utilized in conjunction with previously reported experimental researches to find an optimum place of quantum well for desired performance.