Propagation of surface waves formed at the interface between hyperbolic metamaterial and highly doped semiconductor

摘要

We provide an analysis of surface-wave propagation at a boundary between a semiconductor and a multilayered hyperbolic metamaterial. In particular we analyzed the structure dispersion for various cases of a hyperbolic metamaterial. It is concluded that one can tune the frequency range of surface waves by varying the thickness of dielectric sheets. It is also shown that this frequency range can be broadened by decreasing the thickness of the dielectric in the metal-dielectric compound or by increasing the doping concentration of the semiconductor.