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机译:温度对InGaN发光二极管不同光电特性的影响
Department of Physics, Condensed Matter Physics Research Centre, Jadavpur University, Kolkata 700 032, India;
Department of Physics, Condensed Matter Physics Research Centre, Jadavpur University, Kolkata 700 032, India;
Department of Physics, Condensed Matter Physics Research Centre, Jadavpur University, Kolkata 700 032, India;
Semiconductor rate equations; Radiative recombination coefficient; Radiative efficiency; OCVD technique; Carrier lifetimes; Internal quantum efficiency;
机译:水平型-NJ功能对具有V形凹坑的IngaN基发光二极管光电子特性的影响
机译:使用AIGaN / GaN / InGaN超晶格作为电子阻挡层的InGaN蓝色发光二极管的稳定温度特性
机译:InGaN阱的生长温度和三甲基铟流量对InGaN多量子阱紫光发光二极管光学性能的影响
机译:缺陷对GaN / InGaN基发光二极管的电和光学特性的影响
机译:高效紫色和蓝色IngaN微胶囊发光二极管
机译:InGaN / GaN多量子阱发光二极管中的光电性能变化:电位波动的影响
机译:受体退火温度对InGaN / GaN量子阱发光二极管性能的影响