Studies on single-event phenomena using the heavy-ion microbeam at JAERI

摘要

A single-event upset (SEU) is triggered when the amount of charge induced by an energetic ion striking a sensitive area exceeds a critical charge within a given time interval. An accurate understanding of the charge collection processes that give rise to SEU is critical for the design of SEU tolerant microelectronic devices. The best method for clearly examining charge collection during an SEU is to examine the ultra-fast current transient waveform. This is best achieved by a heavy-ion microbeam in combination with an ultra-fast sampling oscilloscope. In the past there have been numerous experiments aimed at directly measuring the ultra-fast current transient induced in various diodes by single ion strikes. The aim has been to examine the effect of charge collection components such as drift, funneling and diffusion on the SEU processes. In this paper, we present a summary of various experiments using the newly developed transient ion beam induced current system developed at JAERI.