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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >Voltage dependence of cluster size in carbon films using plasma immersion ion implantation
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Voltage dependence of cluster size in carbon films using plasma immersion ion implantation

机译:使用等离子体浸没离子注入的碳膜中簇尺寸的电压依赖性

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Carbon films were prepared using a cathodic arc with plasma immersion ion implantation (PIII). Using Raman spectroscopy to determine cluster size, a comparison is made between cluster sizes at high voltage and a low duty cycle of pulses with the cluster sizes produced at low voltage and a higher duty cycle. We find that for ion implantation in the range 2-20 kV, the cluster size depends more on implantation energy (E) than implantation frequency (f), unlike stress relief, which we have previously shown [M.M.M. Bilek, et al, IEEE Trans. in Plasma Sci., Proceedings 20th ISDEIV 1-5 July 2002, Tours, France, Cat. No. 02CH37331, IEEE, Piscataway, NJ, USA, p. 95] to be dependent on the product Ef. These differences are interpreted in terms of a model in which the ion impacts create thermal spikes.
机译:使用阴极电弧和等离子浸入离子注入(PIII)制备碳膜。使用拉曼光谱法确定簇的大小,将高电压下的簇大小和脉冲的低占空比之间进行比较,而脉冲下的簇大小则在低压和更高的占空比下进行比较。我们发现,对于2-20 kV范围内的离子注入,簇大小更多地取决于注入能量(E)而不是注入频率(f),这与我们先前已显示的应力消除不同[M.M.M. Bilek等,IEEE Trans。在等离子科学,会议录第20 ISDEIV 2002年7月1-5日,图尔,法国,猫。第02CH37331号,IEEE,美国新泽西州皮斯卡塔韦,第3页。 95]取决于产品Ef。这些差异是根据离子碰撞产生热尖峰的模型来解释的。

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