Annealing of radiation damage in (100), (110) and (111) MgO single crystals implanted with Ar~+ ions

摘要

The correlation of radiation damage recovery with crystallographic orientation in magnesium oxide (MgO) single crystals during isochronal post-implantation annealing was investigated. Samples of (100), (110) and (111) MgO were implanted with 100 keV Ar~+ ions at room temperature and annealed in vacuum at temperatures ranging from 600 to 1300℃ for 3 min. Rutherford backscattering spectrometry combined with ion channeling was used to analyze radiation damage and recovery. The results indicated that the radiation damage was stable up to the annealing temperature of ～600℃. At higher annealing temperatures orientation dependent lattice recovery was observed. No complete lattice recovery was achieved, but in (110) MgO the lattice recovery was more effective than in (100) and (111) oriented samples.