Ar/O_2 gas pressure dependence of atomic concentration of zirconia prepared by zirconium pulse arc PBII&D

摘要

Zirconium oxide films were prepared by plasma-based ion implantation and deposition (PBII&D), where a zirconium pulse arc discharge was generated in O_2/Ar gas mixture. The plasma was maintained for approximately 3 ms, and the ion current at the substrate was detected in a time range from 1 to 10 ms after the arc initiation. At O_2/Ar pressures of 2.6-3.0 Pa, a stoichiometric film was obtained, while at a pressure lower than 2.2 Pa, the film also contained ZrO_x (x < 2) phase as well as ZrO_2 phase. In the absence of argon gas, the plasma became unstable, which resulted in shortage of zirconium ions in the plasma, and hence, a stoichiometric condition was not found.