High precision ~(180)Hf ion implantation using a high-current ion implanter

摘要

The development of accurate mass spectrometry, enabling the identification of all the ions extracted from the ion source and further precise ~(180)Hf isotope implantation, in a high current implanter is described. The spectrometry system uses two signals (x~y graphic), one proportional to the magnetic field (x-axes), taken from the high-voltage potential with an optic fiber system, and the other proportional to the beam current intensity (j-axes), taken from a beam-stop. The ion beam mass register in a mass spectrum of all the elements magnetically analyzed with the same radius and defined by a pair of analyzing slits as a function of their beam intensity is presented. Hence, it is possible to implant ~(180)Hf~+, with less than 1% contamination from neighboring isotopes, in order to conduct material characterization studies by Perturbed Angular Correlations. The precision of the low fluence ion implantation has been done by neutron activation analysis.