Study of depth profile of hydrogen in hydrogenated diamond like carbon thin film using ion beam analysis techniques

摘要

The Hydrogenated Diamond Like Carbon (HDLC) thin films are deposited on Silicon substrate at room temperature using asymmetric capacitively coupled RF plasma with varying flow rates of methane. These films are undergone annealing at high vacuum (～10~(-7)torr) and high temperature (750 and 1050℃) furnace. The as-prepared and annealed HDLC films have been depth profiled for hydrogen using the resonance at 6.44 MeV in ~1H(~(19)F,αγ)~(16)Onuclear reaction. The as prepared films exhibit non-uniform depth distribution of hydrogen: it decreases with depth. Annealing in vacuum brings about is a significant desorption of hydrogen from the films. Loss of hydrogen, albeit in much lower proportions, is also induced by the bombarding beam. The films also experience a mild loss of carbon, as shown by proton backscattering spectrometry, during high vacuum annealing. The depth profiles of hydrogen in the annealed films are indicative of the prevalence of graphitic carbon near film-substrate interface.