XAS and TEM studies on ferromagnetic GeMn prepared by Mn ion implantation and helium ion beam induced epitaxial crystallization

摘要

In this study, we prepared a p-type Ge thin film and then implanted Mn ions in it at room temperature. P-type Ge thin film was made by gallium ion implantation in to an n-type Ge substrate to provide additional hole carriers. Mn ions were implanted into the same layer with Ga ions. Helium ion beam induced epitaxial crystallization with 2 MeV was used to growth GeMn thin films. The results show the beam annealed GeMn sample has been regrowth and has magnetoresistance.