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Overview of the 100 mA average-current RF photoinjector

机译:100 mA平均电流RF光电注入器概述

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摘要

High-average-power FELs require high-current, low-emittance and low-energy-spread electron beams. These qualities have been achieved with RF photoinjectors operating at low-duty factors. To date, a high-average-current RF photoinjector operating continuously at 100% duty factor is yet to be demonstrated. The principal challenges of a high-duty-factor normal-conducting RF photoinjector are related to applying a high accelerating gradient continuously, thus generating large ohmic losses in the cavity walls, cooling the injector cavity walls and the high-power RF couplers, and finding a photocathode with reasonable Q.E. that can survive the poor vacuum of the RF photoinjector. We present the preliminary design of a normal-conducting 700 MHz photoinjector with solenoid magnetic fields for emittance compensation. The photoinjector is designed to produce 2.7 MeV electron beams at 3 nC bunch charge and 35 MHz repetition rate (100mA average current). The photoinjector consists ofa 21/2-cell, ?-mode, RF cavity with on-axis electric coupling, and a non-resonant vacuum plenum. Heat removal in the resonant cells is achieved via dense arrays of internal cooling passages capable of handling high-velocity water flows. Megawatt RF power is coupled into the injector through two tapered ridge-loaded waveguides. PARMELA simulations show that the 21/2-cell injector can produce a 7 μm emittance directly. Transverse plasma oscillations necessitate additional acceleration and a second solenoid to realign the phase space envelopes of different axial slices at higher energy, resulting in a normalized rms emittance of 6.5 μm and 34 keV rms energy spread. We are developing a novel cesiated p-type GaN photocathode with 7% quantum efficiency at 350nm and a cesium dispenser to replenish the cathode with cesium through a porous silicon carbide substrate. These performance parameters will be necessary for the design of the 100kW FEL.
机译:高平均功率的FEL需要高电流,低发射率和低能量扩散的电子束。通过在低占空比下工作的RF光电注入器已经达到了这些质量。迄今为止,尚未证明以100%占空比连续运行的高平均电流RF光电注入器。高占空比正导型RF光电注入器的主要挑战涉及连续施加高加速梯度,从而在腔壁中产生大的欧姆损耗,冷却注入器腔壁和高功率RF耦合器,并发现具有合理QE的光电阴极可以承受RF光电注入器真空度不足的问题。我们介绍具有螺线管磁场的正常导电700 MHz光注入器的初步设计,以进行发射补偿。该光电注入器设计为在3 nC束电荷和35 MHz重复频率(平均电流100mA)下产生2.7 MeV电子束。光电注入器包括一个21/2池,α-模式,带同轴电耦合的RF腔和一个非谐振真空腔。谐振单元中的热量通过能够处理高速水流的内部冷却通道的密集阵列实现。兆瓦级的射频功率通过两个锥形加载的脊形波导耦合到注入器中。 PARMELA仿真显示,21/2单元进样器可直接产生7μm的发射率。横向等离子体振荡需要额外的加速度,并且需要第二个螺线管以更高的能量重新排列不同轴向切片的相空间包络,从而导致6.5μm的归一化rms发射率和34 keV rms的能量散布。我们正在开发一种新型铯离子p型GaN光电阴极,在350nm处具有7%的量子效率,以及一种铯分配器,可通过多孔碳化硅衬底为阴极补充铯。这些性能参数对于100kW FEL的设计必不可少。

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