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Overview of the 100mA average-current RF photoinjector

机译:100mA平均电流RF PhotoInjector的概述

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High-average-power FELs require high-current, low-emittance and low-energy-spread electron beams. These qualities have been achieved with RF photoinjectors operating at low-duty factors. To date, a high-average-current RF photoinjector operating continuously at 100% duty factor is yet to be demonstrated. The principal challenges of a high-duty-factor normal-conducting RF photoinjector are related to applying a high accelerating gradient continuously, thus generating large ohmic losses in the cavity walls, cooling the injector cavity walls and the high-power RF couplers, and finding a photocathode with reasonable Q.E. that can survive the poor vacuum of the RF photoinjector. We present the preliminary design of a normal-conducting 700 MHz photoinjector with solenoid magnetic fields for emittance compensation. The photoinjector is designed to produce 2.7 MeV electron beams at 3 nC bunch charge and 35 MHz repetition rate (100 mA average current). The photoinjector consists of a 2 (1/2)-cell, π-mode, RF cavity with on-axis electric coupling, and a non-resonant vacuum plenum. Heat removal in the resonant cells is achieved via dense arrays of internal cooling passages capable of handling high-velocity water flows. Megawatt RF power is coupled into the injector through two tapered ridge-loaded waveguides. PARMELA simulations show that the 2 (1/2)-cell injector can produce a 7 μm emittance directly. Transverse plasma oscillations necessitate additional acceleration and a second solenoid to realign the phase space envelopes of different axial slices at higher energy, resulting in a normalized rms emittance of 6.5 μm and 34 keV rms energy spread. We are developing a novel cesiated p-type GaN photocathode with 7% quantum efficiency at 350 nm and a cesium dispenser to replenish the cathode with cesium through a porous silicon carbide substrate. These performance parameters will be necessary for the design of the 100kW FEL.
机译:高平均功率自由电子激光器需要大电流,低辐射,低能量扩散电子束。这些特质已经实现在低占空因数操作RF photoinjectors。迄今为止,高平均电流RF光阴以100%的占空因数连续操作是尚待证实。高占空因数的正常传导RF光阴的主要挑战涉及施加高连续加速梯度,从而产生在腔体壁的大的欧姆损耗,冷却喷射器腔壁和高功率RF耦合器,和发现合理QE光阴可生存的RF光阴的差真空。我们提出具有用于发射率补偿螺线管磁场正常传导700MHz的光阴的初步设计。所述光阴被设计成产生2.7兆电子伏的电子束在3 NC一堆充电和35MHz的重复率(100毫安平均电流)。所述光阴由一个2(1/2)β细胞,π模式中,RF腔与上轴电耦合,以及非谐振真空腔室中。热去除在谐振细胞经由能够处理高速水流内部冷却通道的密集阵列来实现的。兆瓦RF功率通过两个锥形脊加载波导耦合到喷射器。 PARMELA仿真结果表明,2(1/2)-cell喷射器可以直接产生有7μm出度。横向等离子体振荡需要额外的加速和第二螺线管重新排列不同的轴向切片的相位空间信封在较高的能量,从而产生归一化的均方根发射度为6.5μm和34千电子伏RMS能量扩散。我们正在开发与在350nm处7%的量子效率和铯分配器通过多孔碳化硅衬底以补充铯的阴极的新颖cesiated p型GaN光电阴极。这些性能参数将是必需的100千瓦FEL的设计。

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