Sensor simulation and position calibration for the CMS pixel detector

摘要

In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. We show that charge sharing functions extracted from the simulation can be parameterized as a function of the inter-pixel position and used to improve the position determination. For sensors irradiated to Φ = 5.9 x 10~(14)n_(eq)/cm~2 a position resolution below 15 μm can be achieved after calibration.