Sensor development for the CMS pixel detector

摘要

This paper reports on a current R&D activity for the sensor part of the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluence of 1 /spl times/ 10/sup 15/ n/sup eq//cm/sup 2/ at the CERN PS. Afterwards they have been bump bonded to unirradiated readout chips. The chips allow a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The samples have been tested using high energy pions in the H2 beam line of the CERN SPS in June and September 2003. The results of this test beam are presented and the differences between the sensor options are discussed.