Neutron-induced soft error rate measurements in semiconductor memories

摘要

Soft error rate (SER) testing of devices have been performed using the neutron beam at the Radiation Science and Engineering Center at Penn State University. The soft error susceptibility for different memory chips working at different technology nodes and operating voltages is determined. The effect of ~(10)B on SER as an in situ excess charge source is observed. The effect of higher-energy neutrons on circuit operation will be published later. Penn State Breazeale Nuclear Reactor was used as the neutron source in the experiments. The high neutron flux allows for accelerated testing of the SER phenomenon. The experiments and analyses have been performed only on soft errors due to thermal neutrons. Various memory chips manufactured by different vendors were tested at various supply voltages and reactor power levels. The effect of ~(10)B reaction caused by thermal neutron absorption on SER is discussed.