Characterisation Of Radiation Damage In Silicon Photomultipliers With A Monte Carlo Model

摘要

Measured response functions and low photon yield spectra of silicon photomultipliers (SiPM) were compared to multi-photoelectron pulse-height distributions generated by a Monte Carlo model. Characteristic parameters for SiPM were derived. The devices were irradiated with 14 MeV electrons at the Mainz microtron MAMI. It is shown that the first noticeable damage consists of an increase in the rate of dark pulses and the loss of uniformity in the pixel gains. Higher radiation doses also reduced the photon detection efficiency. The results are especially relevant for applications of SiPM in fibre detectors at high luminosity experiments.