Study of irradiation of silicon with relativistic electron beams by Monte Carlo many-body interaction model of radiation damage

摘要

In this contribution the Monte Carlo method is used to compute the distributions of vacancies with depth in silicon irradiated by relativistic electron beams. The model of N-body interactions in a collision cascade that advances in isotropic continuum was incorporated into the Monte Carlo scheme of successive collisions to obtain depth distributions of vacancies, interstitial atoms, and vacancy clusters produced by 1-10 MeV electrons in silicon. The model developed permits to obtain the statistically averaged space distributions of defects and thermal spikes. Besides the model explains the yield of clusters during sputtering. Defects formed by δ- electrons and primary knock-in atoms are also taken into account.