Modifications in structural and electrical properties of gamma irradiated CdSe nanowires

摘要

Semiconducting nanowires have gained huge interest of researchers due to their interesting properties and potential application in the field of nanoelectronics and optoelectronics. Present study reports the effect of gamma (γ) irradiation on structural and electrical properties of CdSe nanowires. These nanowires were synthesized by a template assisted electrodeposition method which provides uniform and standing nanowires of cylindrical shape. These synthesized nanowires were exposed to gamma rays using a ~(60)Co source. Before and after irradiation, the nanowires were characterized by X-ray diffraction (XRD), Scanning electron microscope (SEM), Energy dispersive X-ray (EDX) and Keithley 2400 series source meter to study their structural and electrical properties. XRD patterns of irradiated samples showed increase in grain size with radiation dose and increase in the peak intensity was observed corresponding to different planes of hexagonal CdSe structure. SEM images confirmed the cylindrical morphology of nanowires and EDX analysis revealed the stoichiometric formation of CdSe. The electrical properties from Ⅰ-Ⅴ characteristics showed an enhancement in the electrical conductivity of the nanowires with radiation dose and applied potential. This modification in electrical conductivity may be attributed to decrease in grain boundary scattering of charge carriers.