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Effects of gamma irradiations on structural and electrical properties of indium oxide thin films prepared by thermal evaporation

机译:γ辐照对热蒸发法制备氧化铟薄膜结构和电性能的影响

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摘要

Effects of gamma irradiations on structural and electrical properties of the post-annealed indium oxide thin films of thickness 750 nm, prepared by thermal evaporation in vacuum, were studied. The thin films, exposed to various levels of the gamma radiation dose, were characterized by XRD, SEM and I-V measurements. Results show that the average grain size and the degree of crystallinity increase with the gamma radiation dose up to a certain dose and decrease thereafter. Results also show that the conductivity Increases with the gamma radiation dose up to the same value of the dose and decreases thereafter. The dislocation density, however, shows the opposite trend of the dose dependence. (C) 2015 Elsevier B.V. All rights reserved.
机译:研究了γ辐射对真空热蒸发制备的750 nm后退火氧化铟薄膜结构和电性能的影响。通过XRD,SEM和I-V测量来表征暴露于各种水平的伽马辐射剂量的薄膜。结果表明,随着γ射线剂量的增加,平均晶粒度和结晶度随剂量的增加而增加,此后减小。结果还表明,电导率随γ辐射剂量的增加而增加,直至达到相同的剂量值,此后减小。然而,位错密度显示出剂量依赖性的相反趋势。 (C)2015 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Materials Letters》 |2016年第1期|372-375|共4页
  • 作者单位

    Indian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India;

    Indian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India;

    Indian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Thin films; Indium oxide; Gamma radiation; Electrical properties; Structure;

    机译:薄膜;氧化铟;伽马射线;电性能;结构;

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