Effect of temperature and charged particle fluence on the resistivity of polycrystalline CVD diamond sensors

摘要

The resistivity of polycrystalline chemical vapor deposition diamond sensors is studied in samples exposed to fluences relevant to the environment of the High Luminosity Large Hadron Collider. We measure the leakage current for a range of bias voltages on samples irradiated with 800 MeV protons up to 1.6 × 10~(16) p/cm~2. The proton beam at LANSCE, Los Alamos National Laboratory, was applied to irradiate the samples. The devices' resistivity is extracted for temperatures in the -10 ℃ to +20 ℃ range.