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Fabrication of double-sided thallium bromide strip detectors

机译:双面溴化strip带状检测器的制造

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摘要

Double-sided strip detectors were fabricated from thallium bromide (TIBr) crystals grown by the traveling-molten zone method using zone-purified materials. The detectors had three 3.4-mm-long strips with 1-mm widths and a surrounding electrode placed orthogonally on opposite surfaces of the crystals at approximately 6.5 × 6.5 mm~2 in area and 5 mm in thickness. Excellent charge transport properties for both electrons and holes were observed from the TIBr crystals. The mobility-lifetime products for electrons and holes in the detector were measured to be ~3 × 10~(-3) cm~2/V and ~1 × 10~(-3) cm~2/V, respectively. The ~(137)Cs spectra corresponding to the gamma-ray interaction position were obtained from the detector. An energy resolution of 3.4% of full width at half maximum for 662-keV gamma rays was obtained from one "pixel" (an intersection of the strips) of the detector at room temperature.
机译:双面带状检测器是由溴化al(TIBr)晶体制造的,该晶体是使用区域纯化的材料通过行熔区方法生长的。探测器有3个3.4mm长的条带,宽度为1mm,周围的电极正交放置在晶体的相对表面上,其面积约为6.5×6.5 mm〜2,厚度为5 mm。从TIBr晶体中观察到了优异的电子和空穴电荷传输性能。检测器中电子和空穴的迁移率寿命乘积分别为〜3×10〜(-3)cm〜2 / V和〜1×10〜(-3)cm〜2 / V。从探测器获得了对应于γ射线相互作用位置的〜(137)Cs光谱。在室温下,从探测器的一个“像素”(条的交叉点)获得了662keV伽马射线的半峰全宽的3.4%的能量分辨率。

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