X-ray and γ -ray spectroscopy using a 2 × 2 GaAs p~+-i-n~+ diode array

摘要

A GaAs 2 × 2 pixel monolithic X-ray detector array was fabricated from material grown by metalorganic vapour phase epitaxy. Each pixel was a 200 μm × 200 μm square mesa p~+-i-n~+ photodiode with a 10 μm thick i layer. The array was electrically characterized and then each pixel was connected to the input of a custom-made, low noise, charge-sensitive preamplifier in tum.~(55)Fe X-ray,~(109)Cd X-ray and γ-ray, and~(241) Am X-ray and γ-ray spectra were accumulated at 20 °C. Following this, the spectroscopic response of one of the pixels was investigated at temperatures ≤ 100 °C. With both the preamplifier and detector array operated at 100 °C, the energy resolution (Full Width at Half Maximum) was 1.61 keV ± 0.04 keV at 5.9 keV, 1.63 keV ± 0.06 keV at 22.16 keV, and 1.65 keV ± 0.08 keV at 59.54 keV. The results suggested that the pixels did not suffer from incomplete charge collection. The energy resolution achieved is the best reported so far for GaAs spectrometers at such high temperatures.