PIN DIODE AND MANUFACTURING METHODE THEREOF AND THIN FILM TRANSISTOR ARRAY SUBSTRATE FOR DIGITAL X-RAY DETECTOR AND THE DIGITAL X-RAY DETECTOR INCLUDING THE SAME

摘要

According to the present invention, since the thickness of the edge of the p-type semiconductor layer of the PIN diode is formed to be thicker than the thickness of the non-edge portion, even if some areas of the outer portion of the p-type semiconductor layer are damaged, the damage due to the thickness of the thick edge portion can be minimized. In addition, according to the present invention, it is possible to minimize the effect of damage to the outer portion of the p-type semiconductor layer by forming only the thickness of the edge portion without increasing the thickness of the non-edge portion, which is the central portion of the p-type semiconductor layer. It is possible to minimize the decrease in transmittance of the PIN diode that may occur as the thickness of the center increases. As described above, the present invention can minimize the decrease in the transmittance of the PIN diode and minimize the effect of damage to the p-type semiconductor layer. By minimizing the leakage current of the PIN diode, the characteristics of the PIN diode can be stabilized.