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Results on proton-irradiated 3D pixel sensors interconnected to RD53A readout ASIC

机译:质子辐照3D像素传感器与RD53A读出ASIC互连的结果

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摘要

Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are reported. Sensors from FBK Italy and IMB-CNM (Spain) have been tested before and after proton-irradiation to an equivalent fluence of about 1 x 10(16) not equal cm(-2) (1 MeV equivalent neutrons). This is the first time that one single collecting electrode fine pitch 3D sensors are irradiated up to such fluence bump-bonded to a fine pitch ASIC. The preliminary analysis of the collected data shows no degradation on the hit detection efficiencies of the tested sensors after high energy proton irradiation, demonstrating the excellent radiation tolerance of the 3D pixel sensors. Thus, they will be excellent candidates for the extreme radiation environment at the innermost layers of the HL-LHC experiments.
机译:报告了将3D像素传感器凸点结合到RD53A原型读出ASIC所获得的测试光束结果。来自意大利FBK和IMB-CNM(西班牙)的传感器已在质子辐照之前和之后进行了测试,其等效能量通量约为1 x 10(16),不等于cm(-2)(1 MeV等效中子)。这是第一次对单个集电极细间距3D传感器进行辐照,直至将其通量凸点键合到细间距ASIC。对收集到的数据进行的初步分析表明,在高能质子辐照后,被测传感器的命中检测效率没有降低,证明了3D像素传感器的出色辐射耐受性。因此,它们将是HL-LHC实验最内层极端辐射环境的极佳候选者。

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