首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment >Single Event Upset tests and failure rate estimation for a front-end ASIC adopted in high-flux-particle therapy applications
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Single Event Upset tests and failure rate estimation for a front-end ASIC adopted in high-flux-particle therapy applications

机译:高通量粒子治疗应用中采用的前端ASIC的单事件翻转测试和失败率估计

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摘要

A 64 channels Application Specific Integrated Circuit, named TERA09, designed in a 0.35 mu m technology for particle therapy applications, has been characterized for Single Event Upset probability. TERA09 is a current-to-frequency converter that offers a wide input range, extending from few nA to hundreds of mu A, with linearity deviations in the order of a few percent. This device operates as front-end readout electronics for parallel plate ionization chambers adopted in clinical applications. This chip is going to be located beside the monitor chamber, thus not directly exposed to the particle beam. For this reason, no radiation hardening techniques were adopted during the microelectronics design. The intent of the test reported in this paper is to predict the TERA09 upset rate probability in a real application scenario. Due to the fact that TERA09 has an extended digital area with registers and counters, it is interesting to estimate the effect of the secondary neutron field produced during the treatment. The radiation damage test took place at the SIRAD facility of the Italian National Institute for Nuclear Physics in Padova, Italy. The SIRAD facility allows to study the CMOS upset rate as a function of the energy deposited during irradiation. By irradiating the chip with ions of different Linear Energy Transfer, it is possible to calculate the single event effect cross-section as a function of the deposited energy. It resulted that the minimum deposited energy in a CMOS silicon sensitive volume of 1 mu m(3), responsible for a Single Event Upset probability higher than zero, is 690 keV. In the last part of the paper, we calculated the expected upset probability in a typical clinical environment, knowing the fluence of secondary, backward-emitted neutrons. Considering as an example a treatment room located at the CNAO particle therapy center in Pavia, the expected upset rate for TERA09 is similar to 10(2) events/year. Using a redundant and independent monitor chamber, the upset probability expected during one detector readout is lower than 10(-24), as explained in the document.
机译:具有0.35微米技术的粒子治疗应用设计的名为TERA09的64通道专用集成电路已经针对单事件翻转概率进行了表征。 TERA09是一款电流-频率转换器,具有宽输入范围,从几nA到数百μA不等,线性偏差约为百分之几。该设备用作临床应用中采用的平行板电离室的前端读取电子设备。该芯片将位于监控室旁边,因此不会直接暴露于粒子束。因此,在微电子设计过程中没有采用辐射硬化技术。本文报道的测试的目的是在实际应用场景中预测TERA09失效率的概率。由于TERA09具有带有寄存器和计数器的扩展数字区域,因此估计处理过程中产生的次级中子场的影响很有趣。辐射损伤测试在意大利帕多瓦意大利国家核物理研究所的SIRAD设施进行。 SIRAD设施允许研究CMOS失调率与辐射过程中沉积能量的关系。通过用不同线性能量转移的离子照射芯片,可以根据沉积能量计算单事件效应截面。结果表明,造成1次事件翻转概率大于零的CMOS硅敏感体积中的最小沉积能量为1μm(3),为690 keV。在本文的最后一部分,我们了解了次级向后发射中子的通量,从而计算了在典型临床环境中的预期失调概率。以位于帕维亚CNAO粒子治疗中心的治疗室为例,TERA09的预期不适发生率类似于每年10(2)个事件。如文档中所述,使用冗余且独立的监视室,一次检测器读数期间预期的颠倒概率低于10(-24)。

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