The Temperature Dependence of Conductivity of Highly Disordered Quasi-Two-Dimensional Metal-Insulator-Semiconductor Structures under Conditions of Quantization of Conductance

摘要

Measurements are performed of the dependence of the conductivity of two-dimensional electron gas in short-channel metal-insulator-semiconductor (MIS) structures with a high fluctuation potential on the electron density s well as of the temperature dependence of the conductivity of such structures. The conductivity of these structures in the region of weak inversion is exponentially dependent on temperature; however, the value of preexponential function does not coincide with the predicted value equal to 2e~2/h. It is suggested that the observed anomalies are associated with the the special structure of he saddle-point regions of the fluctuation potential.