Raman Scattering by Hydrogen Centers in Silicon

摘要

The properties of hydrogen centers in silicon (vacancy-hydrogen complexes, hydrogen platelets, and interstitial hydrogen molecules H_2) are studied using Raman scattering spectroscopy. It is demonstrated that the two-dimensional (2D) H_2 gas can be contained in hydrogen platelets under certain conditions. It is shown that the parastate of an interstitial H_2 molecule (with a zero orbital moment) is unstable for annealing at room temperature and in visible light illumination. A hypothesis that molecules in states with different orbital moments have different diffusion rates is proposed. All known experimental results can be interpreted within the framework of this hypothesis.