Complex Oscillations in a Double-Circuit Self-Oscillator Built on a Field-Effect Transistor on the Basis of the Inductive Three-Point Circuit

摘要

The existence of irregular complex oscillations in a double-circuit self-oscillator built on a field-effect transistor on the basis of the inductive three-point circuit is revealed. The dynamics of the circuit model is analyzed by means of a computer simulation program for construction of the boundaries of the regions of complex oscillations existing in several parameter planes of the system and for determination of the parameters corresponding to the highest intensity of complex oscillations. The necessary conditions for excitation of complex oscillations are obtained in the form of restrictions imposed on the values of the so-called active and passive Q factors of the transistor drain circuit. The value of the allowable external load in the oscillating loop of the drain circuit is estimated from the viewpoint of excitation of complex oscillations.