Nature and Spatial Localization of Electroluminescence Sources in the Metal—Composite Layer—Semiconductor Structures

摘要

Variations in the electroluminescence spectra and intensity of the metal-composite layer-semiconductor (Au-SiO_x.N-y(Si)-cSi) structures as functions of the characteristics of the luminescent-active transition region at the interface of the cSi substrate and the SiO_xN_y,(Si) composite layer are studied. New information on localization of the electroluminescence sources in the transition region is obtained. It is found that the transition region contains various luminescence-active silicon inclusions, which contribute to both the short-wavelength (λ ≈ 500—1000 run) and long-wavelength (λ ≈ 1000-1600 nm) branches of electroluminescence. The effect of technological factors on the electroluminescence spectra, intensity, and quantum efficiency is analyzed.