Hole Formation in a Diamond Substrate of Hybrid-Monolithic Integral SHF Schemes

摘要

In this paper, we study the technological process of separating a heteroplate from a polycrystalline diamond film (PDF-Si), separating a whole plate from sacrificial silicon. The hole formation in a diamond substrate from PDF via laser milling and plasma-chemical etching is studied. Plasma-chemical etching provided batch hole fabrication based on planar technology and precision lithography. The technological modes of hole etching through an aluminum mask via reactive ion etching with an inductively coupled plasma source (RIE-ICP) were optimized. The hole etching rate in the PDF was 1.1 mu m/min. A mathematical model of the technological process is developed. Etching is shown to occur mainly in oxygen. The technological process is adapted for the plasma-chemical etching setup "Plasma TM5". The possibility of etching in a PDF holes 100 mu m in diameter and more than 300 mu m deep was studied. The etching rate was shown to depend on the hole depth and is nonlinear in nature, with etching of the hole walls and the aluminum mask.