Self-limited control of C atomic layer growth on Si(100) has been investigated using electron-cyclotron resonance plasma enhanced chemical vapor deposition with CH_4 reaction under Ar plasma irradiation without substrate heating. Two plasma deposition methods have been examined to control the growth of C on Si(100); a simultaneous exposure method and an alternate exposure method. In the simultaneous exposure method, Si(100) was simultaneously exposed to CH_4 and Ar plasma. In the alternate exposure method, Si(100) was exposed alternately to CH_4 and to Ar plasma. By using the simultaneous exposure method, it has been found that the amount of the deposited C atoms bonded to Si atoms (N_c) tends to increase and saturate at 2-3 atomic layers (AL: 1 AL is defined by the atomic amount of 6.8 × 10~(14) cm~(-2) for Si(100)) with continuous increase of high C-C bond concentration. On the other hand, by using the alternate exposure method, self-limited growth of C on Si(100) can be realized by separating adsorption and reaction processes of CH_4. It is also found that N_c tends to decrease with increase of the Ar purge time, which indicates that the absorbed CH_4 molecules can desorb during the Ar purge.
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