F_T=25GHZ SILICON BIPOLAR TRANSISTOR

摘要

The low-noise and high-gain device is needed for the mobile communication market, especially for low noise amplifiers in cellular handy phones. Recently, higher gain and lower noise devices are rquired, which perform at low current. For that demand, NEC has developed the f_t=25GHz transistor series. In order to achieve target performance, the new wafer process "UHSO", and the new package 4 pin thin super mini mold package" are used.With these technologies, performance of 2SC5508 has achieved f_t=25GHz (V_ce=3V, I_c=30mA),Ga=16dB, NF=1.1dB @f=2GHz,V_CE=2V,I_c=5mA),for instance.