机译:向列量子临界点的电阻率
High Field Magnet Laboratory (HFML-EMFL) and Institute for Molecules and Materials, Radboud University, Nijmegen, The Netherlands;
High Field Magnet Laboratory (HFML-EMFL) and Institute for Molecules and Materials, Radboud University, Nijmegen, The Netherlands;
High Field Magnet Laboratory (HFML-EMFL) and Institute for Molecules and Materials, Radboud University, Nijmegen, The Netherlands;
High Field Magnet Laboratory (HFML-EMFL) and Institute for Molecules and Materials, Radboud University, Nijmegen, The Netherlands|H. H. Wills Physics Laboratory, University of Bristol, Bristol, UK;
Department of Physics, Kyoto University, Kyoto, Japan;
Department of Physics, Kyoto University, Kyoto, Japan;
Department of Advanced Materials Science, University of Tokyo, Kashiwa, Japan;
High Field Magnet Laboratory (HFML-EMFL) and Institute for Molecules and Materials, Radboud University, Nijmegen, The Netherlands;
机译:通过电阻率在CeRhSi_3中搜索量子临界点:量子临界性和新型相专刊的一部分
机译:向列量子临界点附近的电阻率:声学声子的影响
机译:向列量子临界点附近的电阻率:声学声子的影响
机译:半导体量子点掺杂向列液晶纳米复合材料的电调谐光致发光
机译:兰道点附近的向列各向同性转变的临界性质和双轴向列中的线缺陷。
机译:向列量子临界点附近的超导电性和非费米液体行为
机译:在向列量子临界点附近的直流电阻率:弱紊乱和声子宫的影响