机译:硅上的AIII-V纳米线通道,用于高性能垂直晶体管
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060-8628, Japan,Japan Science and Technology Agency—PRESTO, Kawaguchi, Saitama 332-0012, Japan;
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060-8628, Japan;
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060-8628, Japan;
机译:具有多个纳米线通道和多个栅极的高性能金属诱导的横向结晶多晶硅薄膜晶体管
机译:具有氧化物-氮化物-氧化物栅极电介质和多个纳米线通道的高性能多晶硅薄膜晶体管
机译:具有多个纳米线通道和轻掺杂漏极结构的高性能多晶硅薄膜晶体管
机译:高性能硅纳米线晶体管的设计,制造与表征
机译:带有悬浮的锗/硅芯/壳纳米线通道的接近零亚阈值摆幅的纳米机电磁场效应晶体管。
机译:具有全方位纳米栅极的垂直硅纳米线场效应晶体管
机译:用硅纳米线通道的硅纳米线和晶体管的制造
机译:高性能硅纳米线晶体管的设计,制作和表征