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Structural phase transition in monolayer MoTe2 driven by electrostatic doping

机译:静电掺杂驱动单层MoTe2的结构相变

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摘要

Monolayers of transition-metal dichalcogenides (TMDs) exhibit numerous crystal phases with distinct structures, symmetries and physical properties(1-3). Exploring the physics of transitions between these different structural phases in two dimensions(4) may provide a means of switching material properties, with implications for potential applications. Structural phase transitions in TMDs have so far been induced by thermal or chemical means(5,6); purely electrostatic control over crystal phases through electrostatic doping was recently proposed as a theoretical possibility, but has not yet been realized(7,8). Here we report the experimental demonstration of an electrostatic-doping-driven phase transition between the hexagonal and monoclinic phases of monolayer molybdenum ditelluride (MoTe2). We find that the phase transition shows a hysteretic loop in Raman spectra, and can be reversed by increasing or decreasing the gate voltage. We also combine second-harmonic generation spectroscopy with polarization-resolved Raman spectroscopy to show that the induced monoclinic phase preserves the crystal orientation of the original hexagonal phase. Moreover, this structural phase transition occurs simultaneously across the whole sample. This electrostatic-doping control of structural phase transition opens up new possibilities for developing phase-change devices based on atomically thin membranes.
机译:过渡金属二硫化碳(TMD)的单分子层具有众多具有不同结构,对称性和物理性质的晶相(1-3)。探索这些不同结构相之间在二维上的过渡的物理过程(4),可以提供一种切换材料特性的方法,对潜在的应用产生影响。迄今为止,TMDs中的结构相变是通过热或化学方法诱发的(5,6)。从理论上讲,通过静电掺杂对晶相进行纯静电控制是一种理论上的可能性,但尚未实现(7,8)。在这里,我们报告单层二碲化钼(MoTe2)的六方相和单斜相之间的静电掺杂驱动相变的实验演示。我们发现,相变在拉曼光谱中显示出磁滞回线,并且可以通过增加或减少栅极电压来逆转。我们还将二次谐波生成光谱与偏振分辨拉曼光谱相结合,以表明诱导的单斜晶相保留了原始六方相的晶体取向。而且,该结构相变在整个样品中同时发生。结构相变的这种静电掺杂控制为开发基于原子薄膜的相变器件开辟了新的可能性。

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  • 来源
    《Nature》 |2017年第7677期|487-491|共5页
  • 作者单位

    Univ Calif Berkeley, NSF Nanoscale Sci & Engn Ctr NSEC, 3112 Etcheverry Hall, Berkeley, CA 94720 USA;

    Univ Calif Berkeley, NSF Nanoscale Sci & Engn Ctr NSEC, 3112 Etcheverry Hall, Berkeley, CA 94720 USA;

    Univ Calif Berkeley, NSF Nanoscale Sci & Engn Ctr NSEC, 3112 Etcheverry Hall, Berkeley, CA 94720 USA;

    Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA;

    Univ Calif Berkeley, NSF Nanoscale Sci & Engn Ctr NSEC, 3112 Etcheverry Hall, Berkeley, CA 94720 USA;

    Univ Calif Berkeley, NSF Nanoscale Sci & Engn Ctr NSEC, 3112 Etcheverry Hall, Berkeley, CA 94720 USA;

    Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA;

    Univ Calif Berkeley, NSF Nanoscale Sci & Engn Ctr NSEC, 3112 Etcheverry Hall, Berkeley, CA 94720 USA;

    Lawrence Berkeley Natl Lab, Mat Sci Div, 1 Cyclotron Rd, Berkeley, CA 94720 USA|Univ Calif Berkeley, Kavli Energy NanoSci Inst, Berkeley, CA 94720 USA|Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA;

    Univ Calif Berkeley, NSF Nanoscale Sci & Engn Ctr NSEC, 3112 Etcheverry Hall, Berkeley, CA 94720 USA;

    Lawrence Berkeley Natl Lab, Mat Sci Div, 1 Cyclotron Rd, Berkeley, CA 94720 USA|Univ Calif Berkeley, Kavli Energy NanoSci Inst, Berkeley, CA 94720 USA|Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA;

    Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA;

    Univ Calif Berkeley, NSF Nanoscale Sci & Engn Ctr NSEC, 3112 Etcheverry Hall, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Mat Sci Div, 1 Cyclotron Rd, Berkeley, CA 94720 USA|King Abdulaziz Univ, Dept Phys, Jeddah 21589, Saudi Arabia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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  • 入库时间 2022-08-18 02:51:56

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