机译:静电掺杂驱动单层MoTe2的结构相变
Univ Calif Berkeley, NSF Nanoscale Sci & Engn Ctr NSEC, 3112 Etcheverry Hall, Berkeley, CA 94720 USA;
Univ Calif Berkeley, NSF Nanoscale Sci & Engn Ctr NSEC, 3112 Etcheverry Hall, Berkeley, CA 94720 USA;
Univ Calif Berkeley, NSF Nanoscale Sci & Engn Ctr NSEC, 3112 Etcheverry Hall, Berkeley, CA 94720 USA;
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA;
Univ Calif Berkeley, NSF Nanoscale Sci & Engn Ctr NSEC, 3112 Etcheverry Hall, Berkeley, CA 94720 USA;
Univ Calif Berkeley, NSF Nanoscale Sci & Engn Ctr NSEC, 3112 Etcheverry Hall, Berkeley, CA 94720 USA;
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA;
Univ Calif Berkeley, NSF Nanoscale Sci & Engn Ctr NSEC, 3112 Etcheverry Hall, Berkeley, CA 94720 USA;
Lawrence Berkeley Natl Lab, Mat Sci Div, 1 Cyclotron Rd, Berkeley, CA 94720 USA|Univ Calif Berkeley, Kavli Energy NanoSci Inst, Berkeley, CA 94720 USA|Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA;
Univ Calif Berkeley, NSF Nanoscale Sci & Engn Ctr NSEC, 3112 Etcheverry Hall, Berkeley, CA 94720 USA;
Lawrence Berkeley Natl Lab, Mat Sci Div, 1 Cyclotron Rd, Berkeley, CA 94720 USA|Univ Calif Berkeley, Kavli Energy NanoSci Inst, Berkeley, CA 94720 USA|Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA;
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA;
Univ Calif Berkeley, NSF Nanoscale Sci & Engn Ctr NSEC, 3112 Etcheverry Hall, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Mat Sci Div, 1 Cyclotron Rd, Berkeley, CA 94720 USA|King Abdulaziz Univ, Dept Phys, Jeddah 21589, Saudi Arabia;
机译:重新掺杂的Mote2单层中应变可控相位和磁化转变
机译:通过Mote2单层的硫致原取代控制H至T'结构相转变
机译:对过渡金属掺杂MOTE2单层磁力的应变影响
机译:静电驱动颗粒介质的性质:相变和电荷转移
机译:应用于二维Mote2的固态材料中应力调制相变的计算与理论方法
机译:拓扑阶段转变:泰赫兹驱动的单层过渡金属二甲基甲基甲基甲基甲基化物的可逆拓扑相转变(ADV。12/2021)
机译:重新掺杂的Mote2单层中应变可控相位和磁化转变