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机译:居里温度Mn_(0.05)Ge_(0.95)量子点中的电场控制铁磁性
Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
rnMaterials Engineering and Centre for Microscopy and Microanalysis, University of Queensland, Brisbane, Queensland 4072, Australia;
rnDevice Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
rnDevice Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
rnDevice Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
rnIntel Corporation, Santa Clara, California 95054, USA;
rnMaterials Engineering and Centre for Microscopy and Microanalysis, University of Queensland, Brisbane, Queensland 4072, Australia;
rnDevice Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
机译:YbRh_2(Si_(0.95)Ge_(0.05))_ 2中的铁磁量子临界涨落
机译:在Ge / Ge_(0.95)Si_(0.05)/ Ge_(0.9)Si_(0.1)/ Si虚拟衬底上生长的ZnSe外延层和ZnCdSe / ZnSe量子阱的光学表征
机译:Ge_(0.95)Mn_(0.05)薄膜中的磁热效应
机译:GE_(0.95)SN_(0.05)/ GE_(0.9)SN_(0.1)/ GE_(0.95)SN_(0.05)量子孔对SI的Grous-IV基光源进行
机译:使用比较光谱法研究三氧化钨和Tungsten0.95Titanium0.05Oxydron3薄膜。
机译:坡莫合金BiFe0.95Co0.05O3核-壳纳米结构中增强的交换偏压和改善的铁磁性能
机译:铁磁性量子临界波动 YbRh_2(sI_ {0.95} Ge_ {0.05})_ 2