首页> 外文会议>Conference on Lasers and Electro-Optics >Optical study of Ge_(0.95)Sn_(0.05)/Ge_(0.9)Sn_(0.1)/Ge_(0.95)Sn_(0.05) quantum well towards group-IV based light source on Si

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Optical study of Ge_(0.95)Sn_(0.05)/Ge_(0.9)Sn_(0.1)/Ge_(0.95)Sn_(0.05) quantum well towards group-IV based light source on Si

机译：GE_（0.95）SN_（0.05）/ GE_（0.9）SN_（0.1）/ GE_（0.95）SN_（0.05）量子孔对SI的Grous-IV基光源进行

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摘要

A Ge_(0.95)Sn_(0.05)/Ge_(0.9)Sn_(0.1)/Ge_(0.95)Sn_(0.05) single quantum well was grown on Si via chemical vapor deposition. Temperature-dependent Photoluminescence shows the emission peak from the GeSn well. The studied structure aims for group-IV based efficient light source on Si.

机译：GE_（0.95）SN_（0.05）/ GE_（0.9）SN_（0.1）/ GE_（0.95）SN_（0.05）单量子通过化学气相沉积在Si上生长。温度依赖性光致发光显示来自GESN的发射峰。研究结构旨在Si上基于IV组的高效光源。

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《Conference on Lasers and Electro-Optics 》|2016年|1611-2418p|共2页
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Wei Du; Seyed Ghetmiri; Sattar Al-Kabi; Aboozar Mosleh; Joe Margetis; John Tolle; Greg Sun; Richard A. Soref; Baohua Li; Hameed A. Naseem; Shui-Qing Yu; Mansour Mortazavi;
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中图分类 TN2-53;
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studied; structure; aims;

机译：研究;结构;目标;

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1. Optical characterization of ZnSe epilayers and ZnCdSe/ZnSe quantum wells grown on Ge/Ge_(0.95)Si_(0.05)/Ge_(0.9)Si_(0.1)/Si virtual substrates [J] . J. T. Ku, M. C. Kuo, J. L. Shen, Journal of Applied Physics . 2006 ,第6期

机译：在Ge / Ge_（0.95）Si_（0.05）/ Ge_（0.9）Si_（0.1）/ Si虚拟衬底上生长的ZnSe外延层和ZnCdSe / ZnSe量子阱的光学表征
2. Ultra-low specific contact resistivity (1.4 × 10~(-9) Ω·cm~2) for metal contacts on in-situ Ga-doped Ge_(0.95)Sn_(0.05) film [J] . Ying Wu, Sheng Luo, Wei Wang, Journal of Applied Physics . 2017 ,第22期

机译：原位Ga掺杂Ge_（0.95）Sn_（0.05）膜上金属触点的超低比接触电阻率（1.4×10〜（-9）Ω·cm〜2）
3. Temperature dependent carrier lifetime, diffusion coefficient and diffusion length in Ge_(0.95)Sn_(0.05) epilayer [J] . Patrik Scajev, Vaiva Soriute, Gediminas Kreiza, Journal of Applied Physics . 2020 ,第11期

机译：GE_（0.95）SN_（0.05）的温度依赖性载体寿命，扩散系数和扩散长度
4. Optical study of Ge_(0.95)Sn_(0.05)/Ge_(0.9)Sn_(0.1)/Ge_(0.95)Sn_(0.05) quantum well towards group-IV based light source on Si [C] . Wei Du, Seyed Ghetmiri, Sattar Al-Kabi, Conference on Lasers and Electro-Optics . 2016

机译：GE_（0.95）SN_（0.05）/ GE_（0.9）SN_（0.1）/ GE_（0.95）SN_（0.05）量子孔对SI的Grous-IV基光源进行
5. A study of tungsten trioxide and Tungsten0.95Titanium0.05Oxydron3 thin films using comparative spectroscopy. [D] . Howard, James Heyward. 2012

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7. Ferromagnetic quantum critical fluctuations in YbRh_2(Si_{0.95}Ge_{0.05})_2 [O] . Gegenwart, P., Custers, J., Tokiwa, Y., 2005

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Optical study of Ge_(0.95)Sn_(0.05)/Ge_(0.9)Sn_(0.1)/Ge_(0.95)Sn_(0.05) quantum well towards group-IV based light source on Si

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