One-step fabrication of 2D circuits

摘要

Silicon-based complementary metal–oxide–semiconductor (CMOS)technology is rapidly approaching itphysical scaling limits, but the demand forelectronic devices with higher performanceand better energy efficiency remains.Over the past decade, two-dimensionalsemiconductors have been intenselyexplored as alternative channel materials fortransistors due to their ultrathin body andtheir potential to provide ideal electrostaticcontrol. However, the scalable productionand integration of 2D materials withdissimilar electrical properties remains asignificant challenge. Existing approachesto creating 2D devices are also proneto detrimental defects and impurities,introduced through the heterogeneoustransfer and device fabrication processesused. Transforming current 2D devicefabrication into a non-destructive, holisticscheme could allow the full potential ofusing 2D materials in electronics to berealized. Writing in Nature Electronics,Tian-Ling Ren, Liying Jiao and colleaguesnow show that 2D circuits can besimultaneously synthesized and integratedusing a phase-selective growth.